N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Feature
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard through-hole power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered