This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Feature
AmongthelowestRDS(on)onthemarket
ExcellentFoM(figureofmerit)
LowCrss/CissratioforEMIimmunity
Highavalancheruggedness
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
