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The SI4431BDY-T1-E3 is MOSFET P-CH 30V 5.7A 8-SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4431BDY-E3, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as 8-SOIC (0.154", 3.90mm Width) Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is 8-SO, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 1.5W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 30V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 5.7A (Ta), and the Rds On Max Id Vgs is 30 mOhm @ 7.5A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 20nC @ 5V, and Pd Power Dissipation is 1.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 47 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 5.7 A, and the Vds Drain Source Breakdown Voltage is - 30 V, and Rds On Drain Source Resistance is 30 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 70 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Enhancement.
The SI4431BDY-T1-GE3 is MOSFET P-CH 30V 5.7A 8SOIC, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a - 30 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.006596 oz, that offers Typical Turn On Delay Time features such as 10 ns, Typical Turn Off Delay Time is designed to work in 70 ns, as well as the 1 P-Channel Transistor Type, the device can also be used as P-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 10 ns Rise Time, the device has a 30 mOhms of Rds On Drain Source Resistance, and Pd Power Dissipation is 1.5 W, and the Part Aliases is SI4431BDY-GE3, and Packaging is Reel, and the Package Case is SOIC-Narrow-8, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 5.7 A, and the Fall Time is 10 ns, and Configuration is Single, and the Channel Mode is Enhancement.
SI4431BDY-TI-E3 with circuit diagram manufactured by VISHAY. The SI4431BDY-TI-E3 is available in SOP8 Package, is part of the IC Chips.
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
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