This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
Feature
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 s Short Circuit Capability
These are Pb−Free Devices
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
