The SI7234DP-T1-GE3 is MOSFET 2N-CH 12V 60A PPAK SO-8, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI7234DP-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the PowerPAKR SO-8 Dual Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is PowerPAKR SO-8 Dual, and the Configuration is Dual Dual Drain, and FET Type is 2 N-Channel (Dual), and the Power Max is 46W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 5000pF @ 6V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 60A, and the Rds On Max Id Vgs is 3.4 mOhm @ 20A, 4.5V, and Vgs th Max Id is 1.5V @ 250μA, and the Gate Charge Qg Vgs is 120nC @ 10V, and Pd Power Dissipation is 3.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 25 ns, and Rise Time is 15 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 60 A, and the Vds Drain Source Breakdown Voltage is 12 V, and Rds On Drain Source Resistance is 4 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 90 ns, and the Typical Turn On Delay Time is 30 ns, and Forward Transconductance Min is 100 S, and the Channel Mode is Enhancement.

The SI7236DP-T1-GE3 is MOSFET 2N-CH 20V 60A PPAK SO-8, that includes 1.5V @ 250μA Vgs th Max Id, they are designed to operate with a 12 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Unit Weight features such as 0.017870 oz, Typical Turn On Delay Time is designed to work in 30 ns 10 ns, as well as the 80 ns 60 ns Typical Turn Off Delay Time, the device can also be used as 2 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a PowerPAKR SO-8 Dual of Supplier Device Package, and Series is TrenchFETR, and the Rise Time is 100 ns 15 ns, and Rds On Max Id Vgs is 5.2 mOhm @ 20.7A, 4.5V, and the Rds On Drain Source Resistance is 5.2 mOhms, and Power Max is 46W, and the Pd Power Dissipation is 3.5 W, and Part Aliases is SI7236DP-GE3, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is PowerPAKR SO-8 Dual, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 2 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Input Capacitance Ciss Vds is 4000pF @ 10V, and Id Continuous Drain Current is 20.7 A, and the Gate Charge Qg Vgs is 105nC @ 10V, and FET Type is 2 N-Channel (Dual), and the FET Feature is Standard, and Fall Time is 22 ns 10 ns, and the Drain to Source Voltage Vdss is 20V, and Current Continuous Drain Id 25°C is 60A, and the Configuration is Dual, and Channel Mode is Enhancement.

The SI7236DP-T1-E3 is MOSFET 2N-CH 20V 60A PWRPAK 8-SO, that includes Enhancement Channel Mode, they are designed to operate with a Dual Configuration, Current Continuous Drain Id 25°C is shown on datasheet note for use in a 60A, that offers Drain to Source Voltage Vdss features such as 20V, Fall Time is designed to work in 22 ns 10 ns, as well as the Standard FET Feature, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Gate Charge Qg Vgs is 105nC @ 10V, the device is offered in 20.7 A Id Continuous Drain Current, the device has a 4000pF @ 10V of Input Capacitance Ciss Vds, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Mounting Type is Surface Mount, and the Mounting Style is SMD/SMT, and Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is PowerPAKR SO-8 Dual, and the Packaging is Tape & Reel (TR), and Part Aliases is SI7236DP-E3, and the Pd Power Dissipation is 3.5 W, and Power Max is 46W, and the Rds On Drain Source Resistance is 5.2 mOhms, and Rds On Max Id Vgs is 5.2 mOhm @ 20.7A, 4.5V, and the Rise Time is 100 ns 15 ns, and Series is TrenchFETR, and the Supplier Device Package is PowerPAKR SO-8 Dual, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 2 N-Channel, and the Typical Turn Off Delay Time is 80 ns 60 ns, and Typical Turn On Delay Time is 30 ns 10 ns, and the Unit Weight is 0.017870 oz, and Vds Drain Source Breakdown Voltage is 20 V, and the Vgs Gate Source Voltage is 12 V, and Vgs th Max Id is 1.5V @ 250μA.

SI-7235E with EDA / CAD Models manufactured by SANKEN. The SI-7235E is available in SIP Package, is part of the Module.

SI7236DP with PDF manufactured by VISHAY. The SI7236DP is available in QFN Package, is part of the FETs - Arrays.