DMN3067LW-7

DMN3067LW-7

Manufacturers：Diodes Incorporated
QTy：68800
Partno：NEW
Packing：SOT-323
Content：In stock

Specifications：

DMN3067LW-7 Product Details

N-Channel MOSFET, 30V, Diodes Inc

Technical Parameters

Channel Type	N	Transistor Configuration	Single
Maximum Continuous Drain Current	2.6 A	Maximum Gate Source Voltage	-12 V, +12 V
Maximum Drain Source Voltage	30 V	Number of Elements per Chip	1
Package Type	SOT-323 (SC-70)	Height	1mm
Mounting Type	Surface Mount	Length	2.2mm
Pin Count	3	Width	1.35mm
Maximum Drain Source Resistance	98 mΩ	Transistor Material	Si
Channel Mode	Enhancement	Forward Diode Voltage	1.2V
Maximum Gate Threshold Voltage	1.5V	Typical Gate Charge @ Vgs	4.6 nC @ 4.5 V
Minimum Gate Threshold Voltage	0.5V	Minimum Operating Temperature	-55 °C
Maximum Power Dissipation	1.1 W	Maximum Operating Temperature	+150 °C

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