The CSD19535KTTT is MOSFET 100V N-Channel NexFET Power MOSFET, that includes CSD19535KTT Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.068654 oz, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in NexFET, as well as the TO-263-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 15 ns, and Rise Time is 18 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 200 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 2.2 V, and the Rds On Drain Source Resistance is 4.1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 21 ns, and Typical Turn On Delay Time is 9 ns, and the Qg Gate Charge is 75 nC, and Forward Transconductance Min is 301 S, and the Channel Mode is Enhancement.

The CSD19535KCS is MOSFET 100V N-CH NexFET Pwr MOSFET, that includes 2.7 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Unit Weight features such as 0.211644 oz, Transistor Type is designed to work in 1 N-Channel, as well as the N-Channel Transistor Polarity, the device can also be used as NexFET Tradename. In addition, the Technology is Si, the device is offered in CSD19535KCS Series, the device has a 15 ns of Rise Time, and Rds On Drain Source Resistance is 3.4 mOhms, and the Qg Gate Charge is 78 nC, and Pd Power Dissipation is 300 W, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 187 A, and Forward Transconductance Min is 274 S, and the Fall Time is 5 ns, and Configuration is Single.

The CSD19534Q5AT is MOSFET N-CH 100V 50 8SON, that includes 50A (Ta) Current Continuous Drain Id 25°C, they are designed to operate with a 100V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Standard, that offers FET Type features such as MOSFET N-Channel, Metal Oxide, Gate Charge Qg Vgs is designed to work in 22nC @ 10V, as well as the 1680pF @ 50V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Digi-ReelR Alternate Packaging of Packaging, and Power Max is 3.2W, and the Rds On Max Id Vgs is 15.1 mOhm @ 10A, 10V, and Series is NexFET?, and the Supplier Device Package is 8-VSON (5x6), and Vgs th Max Id is 3.4V @ 250μA.

The CSD19535KTT is MOSFET 100V N-CH NexFET Pwr MOSFET, that includes Si Technology, they are designed to operate with a Reel Packaging, Transistor Polarity is shown on datasheet note for use in a N-Channel, that offers Series features such as CSD19535KTT, Transistor Type is designed to work in 1 N-Channel, as well as the 1 Channel Number of Channels.