The XP161A1355PRN is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
Features:
Low On-State Resistance
Rds (on)= 0.05Ω@ Vgs = 4.5V
Rds (on)= 0.07Ω@ Vgs = 2.5V
Rds (on)= 0.15Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage: 1.5V
Feature
■
Low On-State Resistance : Rds (on)= 0.05Ω @ Vgs = 4.5V
: Rds (on)= 0.07Ω @ Vgs = 2.5V
: Rds (on)= 0.15Ω @ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■ APPLICATIONS
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
