The SI2333DS-T1-E3 parts are Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R, manufactured by VISHAY SILICONIX are available for purchase at freesky Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers. The SI2333DS-T1-E3 components of freesky Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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Transistor Polarity | P-Channel | Packaging | Reel |
---|---|---|---|
Drain Source Breakdown Voltage | 12 V | Fall Time | 45 ns |
Gate Source Breakdown Voltage | +/- 8 V | Minimum Operating Temperature | - 55 C |
Continuous Drain Current | 4.1 A | Power Dissipation | 750 mW |
Resistance Drain Source RDS (on) | 0.032 Ohms | Rise Time | 45 ns |
Configuration | Single | Factory Pack Quantity | 3000 |
Maximum Operating Temperature | + 150 C | Typical Turn Off Delay Time | 72 ns |
Mounting Style | SMD/SMT | Part # Aliases | SI2333DS-E3 |
Package / Case | TO-236-3 |
The Si2333DDS-T1-GE3 is MOSFET P-CH 12V 6A SOT23, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in P-Channel Gen III, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 1.7W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 1275pF @ 6V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 6A (Tc), and the Rds On Max Id Vgs is 28 mOhm @ 5A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 35nC @ 8V, and Pd Power Dissipation is 1.7 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 20 ns, and Rise Time is 24 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is - 6 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Rds On Drain Source Resistance is 28 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 26 ns, and the Typical Turn On Delay Time is 45 ns, and Qg Gate Charge is 9 nC, and the Forward Transconductance Min is 18 S.
SI2333DDS-T1-E3 with user guide manufactured by SON/VISHAY. The SI2333DDS-T1-E3 is available in SOT-23 Package, is part of the IC Chips.
SI2333DS with circuit diagram manufactured by VISHAY. The SI2333DS is available in SOT-23 Package, is part of the FETs - Single.
SI2333DS-T1-E with EDA / CAD Models manufactured by VISHAY. The SI2333DS-T1-E is available in SOT-23 Package, is part of the FETs - Single.
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