General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchilds proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very
small outline surface mount package.

Features
1.3 A, 20 V. Rds(ON) = 0.21 W @ Vgs= 2.7 V
Rds(ON) = 0.16 W @ Vgs= 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOTTM-3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.

General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchilds proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very
small outline surface mount package.

Features
1.3 A, 20 V. Rds(ON) = 0.21 W @ Vgs= 2.7 V
Rds(ON) = 0.16 W @ Vgs= 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOTTM-3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.

Feature

Applications

• NDS351AN
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• ModelsDescriptionOperation

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