The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector.This unit is 8−lead DIP package. This device is suitable for gate driving circuit of IGBT or power MOS FET.
ModelsDescriptionOperation
TLP2361TOSHIBA, SOP5Compare
TLP2105TOSHIBA, 8-SOIC (0.154", 3.90mm Width)Compare
TLP2116TOSHIBA, SOIC-8Compare
TLP202ATOSHIBA, SOP-8Compare
TLP227AOptocouplers/Optoisolators, TOSHIBA, sopDIP4Compare
TLP185GRTOSHIBA, SOP4Compare
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