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| Manufacturer | SAMSUNG | RoHs Status | Lead free / RoHS Compliant |
|---|---|---|---|
| Packing | Tape & Reel (TR)/Cut Tape (CT)/Tray/Tube | Package/Case | BGA-584 |
S5PMS-M3/87A with pin details, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a TO-277, 3-PowerDFN Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as TO-277A (SMPC), Speed is designed to work in Standard Recovery >500ns, > 200mA (Io), as well as the Standard Diode Type, the device can also be used as 3μA @ 1000V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.1V @ 2A, the device is offered in 1000V (1kV) Voltage DC Reverse Vr Max, the device has a 1.8A (DC) of Current Average Rectified Io, and Reverse Recovery Time trr is 1.5μs, and the Capacitance Vr F is 11pF @ 4V, 1MHz, it has an Operating Temperature Junction range of -55°C ~ 150°C.
S5PMS-M3/86A with user guide, that includes 940mV @ 2.5A Voltage Forward Vf Max If, they are designed to operate with a 1000V (1kV) Voltage DC Reverse Vr Max, Supplier Device Package is shown on datasheet note for use in a TO-277A (SMPC), that offers Speed features such as Fast Recovery = 200mA (Io), Reverse Recovery Time trr is designed to work in 2.5μs, as well as the Tape & Reel (TR) Alternate Packaging Packaging, the device can also be used as TO-277, 3-PowerDFN Package Case, it has an Operating Temperature Junction range of -55°C ~ 150°C, the device is offered in Surface Mount Mounting Type, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 10μA @ 1000V, and the Current Average Rectified Io is 1.8A (DC), and Capacitance Vr F is 40pF @ 4V, 1MHz.
S5PF30L with circuit diagram manufactured by ST. The S5PF30L is available in SOP-8 Package, is part of the FETs - Single.
S5PV210A80-LA40 with EDA / CAD Models manufactured by SAMSUNG. The S5PV210A80-LA40 is available in FBGA584 Package, is part of the IC Chips.
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