The SI3410DV-T1-GE3 is MOSFET N-CH 30V 8A 6-TSOP, that includes Reel Packaging, they are designed to operate with a SI3410DV-GE3 Part Aliases, Unit Weight is shown on datasheet note for use in a 0.000705 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TSOP-6, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 2 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 9 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 7.5 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 19.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20 ns, and the Typical Turn On Delay Time is 21 ns, and Qg Gate Charge is 21.8 nC.

The Si3407DV-T1-GE3 is MOSFET P-CH 20V 8A 6-TSOP, that includes 12 V Vgs Gate Source Voltage, they are designed to operate with a - 20 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.000705 oz, that offers Transistor Type features such as 1 P-Channel, Transistor Polarity is designed to work in P-Channel, as well as the Si Technology, the device can also be used as 24 mOhms Rds On Drain Source Resistance. In addition, the Pd Power Dissipation is 2 W, the device is offered in SI3407DV-GE3 Part Aliases, the device has a Reel of Packaging, and Package Case is TSOP-6, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 7.5 A, and Configuration is Single.

The SI3407DV-T1-E3 is MOSFET P-CH 20V 8A 6-TSOP manufactured by VISHAY. The SI3407DV-T1-E3 is available in SOT-23-6 Thin, TSOT-23-6 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 20V 8A 6-TSOP, P-Channel 20V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP.

SI3410DV with EDA / CAD Models manufactured by VISHAY. The SI3410DV is available in TSOP6 Package, is part of the FETs - Single.

The SI3410DV-T1-E3 is MOSFET N-CH 30V 8A 6-TSOP manufactured by VISHAY/SILICONIX. The SI3410DV-T1-E3 is available in SOT-23-6 Thin, TSOT-23-6 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 8A 6-TSOP, N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP, Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R.