PBSS4160PANPSX with pin details, that includes Automotive, AEC-Q101 Series, they are designed to operate with a Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as DFN2020-6, Configuration is designed to work in Dual, as well as the 370mW Power Max, the device can also be used as NPN, PNP Transistor Type. In addition, the Current Collector Ic Max is 1A, the device is offered in 60V Voltage Collector Emitter Breakdown Max, the device has a 150 @ 500mA, 2V / 120 @ 500mA, 2V of DC Current Gain hFE Min Ic Vce, and Vce Saturation Max Ib Ic is 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A, and the Current Collector Cutoff Max is 100nA (ICBO), and Frequency Transition is 175MHz, 125MHz, and the Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 60 V - 60 V, and the Transistor Polarity is NPN PNP, and Collector Emitter Saturation Voltage is 90 mV - 125 mV, and the Collector Base Voltage VCBO is 60 V - 60 V, and Emitter Base Voltage VEBO is 7 V - 7 V, and the Maximum DC Collector Current is 1 A - 1 A, and Gain Bandwidth Product fT is 175 MHz 125 MHz, and the DC Collector Base Gain hfe Min is 290 170.

PBSS4160PANSX with user guide, that includes 60V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 120mV @ 50mA, 500mA Vce Saturation Max Ib Ic, Transistor Type is shown on datasheet note for use in a 2 NPN (Dual), that offers Transistor Polarity features such as NPN, Series is designed to work in Automotive, AEC-Q101, as well as the 370mW Power Max, the device can also be used as 2 W Pd Power Dissipation. In addition, the Packaging is Alternate Packaging, the device is offered in DFN2020D-6 Package Case, the device has a SMD/SMT of Mounting Style, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Maximum DC Collector Current is 1 A 1 A, and the Gain Bandwidth Product fT is 175 MHz 175 MHz, and Frequency Transition is 175MHz, and the Emitter Base Voltage VEBO is 7 V 7 V, and DC Current Gain hFE Min Ic Vce is 150 @ 500mA, 2V, and the DC Collector Base Gain hfe Min is 290 290, and Current Collector Ic Max is 1A, and the Current Collector Cutoff Max is 100nA (ICBO), and Configuration is Dual, and the Collector Emitter Voltage VCEO Max is 60 V 60 V, and Collector Emitter Saturation Voltage is 90 mV 90 mV, and the Collector Base Voltage VCBO is 60 V 60 V.

The PBSS4160PANP,115 is TRANS NPN/PNP 60V 1A 6HUSON, that includes 100nA (ICBO) Current Collector Cutoff Max, they are designed to operate with a 1A Current Collector Ic Max, DC Current Gain hFE Min Ic Vce is shown on datasheet note for use in a 150 @ 500mA, 2V, that offers Frequency Transition features such as 175MHz, Mounting Type is designed to work in Surface Mount, as well as the 6-UDFN Exposed Pad Package Case, the device can also be used as Digi-ReelR Alternate Packaging Packaging. In addition, the Power Max is 510mW, the device is offered in DFN2020D-6 Supplier Device Package, the device has a NPN, PNP of Transistor Type, and Vce Saturation Max Ib Ic is 120mV @ 50mA, 500mA, and the Voltage Collector Emitter Breakdown Max is 60V.

PBSS4160QAZ with EDA / CAD Models, that includes Surface Mount Mounting Type, they are designed to operate with a NPN Transistor Type, Packaging is shown on datasheet note for use in a Digi-ReelR Alternate Packaging, that offers Supplier Device Package features such as DFN1010D-3, DC Current Gain hFE Min Ic Vce is designed to work in 85 @ 1A, 2V, as well as the 60V Voltage Collector Emitter Breakdown Max, the device can also be used as 3-XDFN Exposed Pad Package Case. In addition, the Vce Saturation Max Ib Ic is 245mV @ 50mA, 1A, the device is offered in 1W Power Max, the device has a 1A of Current Collector Ic Max, and Frequency Transition is 180MHz,