The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
Feature
Pb-Free Packages are Available
Applications
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
(Picture: Pinout)
Technical Parameters
Configuration
Single
Maximum Operating Temperature
+ 150 C
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector Base Voltage VCBO
350 V
Package / Case
TO-220-3
Collector Emitter Voltage VCEO Max
300 V
Continuous Collector Current
8 A
Emitter Base Voltage VEBO
6 V
Maximum Power Dissipation
80 W
Collector Emitter Saturation Voltage
2 V
Minimum Operating Temperature
- 65 C
Maximum DC Collector Current
8 A
Packaging
Tube
DC Collector/Base Gain hfe Min
15
Factory Pack Quantity
50
MJE5850G Documents
MJE5850
Download
MJE5850G Related Products
ModelsDescriptionOperation
MJE18204Bipolar power transistors, ON, TO-220Compare
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
