This N-Channel MOSFET is produced using an advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Feature
RDS(on) = 121 mΩ ( Typ.)@ VGS = 10 V, ID = 2.8 A
RDS(on) = 156 mΩ ( Typ.)@ VGS = 5 V, ID = 1.8 A
Fast Switching Speed
Low Gate Charge ( Typ.2.9nC)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
