The NSV60600MZ4T1G is TRANS PNP 60V 6A SOT223-4, that includes NSS60600 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006632 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-261-4, TO-261AA, as well as the Surface Mount Mounting Type, the device can also be used as SOT-223-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 800mW Power Max, the device has a PNP of Transistor Type, and Current Collector Ic Max is 6A, and the Voltage Collector Emitter Breakdown Max is 60V, and DC Current Gain hFE Min Ic Vce is 120 @ 1A, 2V, and the Vce Saturation Max Ib Ic is 350mV @ 600mA, 6A, and Current Collector Cutoff Max is 100nA (ICBO), and the Frequency Transition is 100MHz, and Pd Power Dissipation is 2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is - 60 V, and Transistor Polarity is PNP, and the Collector Emitter Saturation Voltage is - 0.1 V, and Collector Base Voltage VCBO is - 100 V, and the Emitter Base Voltage VEBO is - 6 V, and Maximum DC Collector Current is - 12 A, and the Gain Bandwidth Product fT is 100 MHz, and DC Collector Base Gain hfe Min is 120 at - 1 A at - 2 V, and the DC Current Gain hFE Max is 360 at - 1 A at - 2 V.

The NSV60601MZ4T1G is Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT), that includes 0.006632 oz Unit Weight, they are designed to operate with a NPN Transistor Polarity, Series is shown on datasheet note for use in a NSS60601MZ4, that offers Pd Power Dissipation features such as 2 W, Packaging is designed to work in Reel, as well as the SOT-223-4 Package Case, the device can also be used as SMD/SMT Mounting Style, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, the device has a 12 A of Maximum DC Collector Current, and Gain Bandwidth Product fT is 100 MHz, and the Emitter Base Voltage VEBO is 6 V, and DC Current Gain hFE Max is 360 at 1 A at 2 V, and the DC Collector Base Gain hfe Min is 120 at 1 A at 2 V, and Configuration is Single, and the Collector Emitter Voltage VCEO Max is 60 V, and Collector Emitter Saturation Voltage is 0.085 V, and the Collector Base Voltage VCBO is 100 V.

The NSV60601MZ4T3G is Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT), that includes Reel Packaging, they are designed to operate with a NSS60601MZ4 Series, Transistor Polarity is shown on datasheet note for use in a NPN.

The NSV60600MZ4T3G is Bipolar Transistors - BJT PNP LOW VCE(SAT), that includes Reel Packaging, they are designed to operate with a PNP Transistor Polarity, Series is shown on datasheet note for use in a NSS60600.

NSV9435T1G with PDF, that includes NSB9435 Series, they are designed to operate with a Reel Packaging.