PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Feature
Shielded Gate MOSFET Technology
Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A
Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
