NJVMJD44H11T4G

Manufacturers：ON
QTy：65600
Partno：NEW
Packing：TO-252
Content：In stock

Specifications：

NJVMJD44H11T4G Product Details

NPN Power Transistors, ON Semiconductor Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation VoltageVCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant

(Picture: Pinout)

Configuration	Single	Maximum Operating Temperature	+ 150 C
Transistor Polarity	NPN	Package / Case	DPAK
Collector Emitter Voltage VCEO Max	80 V	DC Current Gain hFE Max	60 at 2 A at 1 V
Emitter Base Voltage VEBO	5 V	Maximum Power Dissipation	1750 mW
Maximum DC Collector Current	8 A	Minimum Operating Temperature	- 55 C
Gain Bandwidth Product fT	85 MHz	Packaging	Reel
DC Collector/Base Gain hfe Min	60 at 2 A at 1 V, 40 at 4 A at 1 V