IRLML9303TRPBF

Manufacturers：IR
QTy：73500
Partno：NEW
Packing：SOT-23
Content：In stock

Specifications：

Infineon
IRLML9303TRPBF

Mosfet, P-channel, -30V, -2.3A, 165 Mohm, SOT-23

Technical Specifications

Infineon IRLML9303TRPBF technical specifications, attributes, and parameters.

Physical
Case/Package	SOT-23
Mount	Surface Mount
Number of Pins	3
Technical
Continuous Drain Current (ID)	-2.3 A
Drain to Source Breakdown Voltage	-30 V
Drain to Source Resistance	220 mΩ
Drain to Source Voltage (Vdss)	-30 V
Element Configuration	Single
Fall Time	8.6 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	160 pF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	1.25 W
Manufacturer Package Identifier	Micro3
Min Operating Temperature	-55 °C
Nominal Vgs	-1.3 V
Number of Channels	1
Packaging	Cut Tape
Power Dissipation	1.25 W
Rds On Max	165 mΩ
Recovery Time	18 ns
Resistance	165 MΩ
Rise Time	14 ns
Schedule B	8541290080
Threshold Voltage	-1.3 V
Turn-Off Delay Time	9 ns
Turn-On Delay Time	7.5 ns
Dimensions
Height	1.016 mm
Length	3.0226 mm
Width	1.397 mm
Compliance
Lead Free	Lead Free
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS	Compliant

Parts with Similar Specs

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Mount
Surface Mount

Case/Package
SOT-23

Drain to Source Voltage (Vdss)
-30 V

Continuous Drain Current (ID)
-2.3 A

Threshold Voltage
-1.3 V

Rds On Max
165 mΩ

Gate to Source Voltage (Vgs)
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Power Dissipation
1.25 W

Input Capacitance
160 pF

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Case/Package
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Drain to Source Voltage (Vdss)
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Continuous Drain Current (ID)
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Threshold Voltage
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Rds On Max
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Gate to Source Voltage (Vgs)
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Power Dissipation
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Input Capacitance
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Case/Package
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Drain to Source Voltage (Vdss)
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Continuous Drain Current (ID)
2.7 A

Threshold Voltage
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Rds On Max
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Gate to Source Voltage (Vgs)
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Power Dissipation
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Input Capacitance
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ON Semiconductor

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Mount
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Case/Package
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Drain to Source Voltage (Vdss)
30 V

Continuous Drain Current (ID)
1.4 A

Threshold Voltage
2.1 V

Rds On Max
160 mΩ

Gate to Source Voltage (Vgs)
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Power Dissipation
500 mW

Input Capacitance
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11

Mount
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Case/Package
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Drain to Source Voltage (Vdss)
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Continuous Drain Current (ID)
1.1 A

Threshold Voltage
-

Rds On Max
160 mΩ

Gate to Source Voltage (Vgs)
20 V

Power Dissipation
500 mW

Input Capacitance
140 pF

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IRLML5203TRPBF

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Mount
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Case/Package
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Drain to Source Voltage (Vdss)
30 V

Continuous Drain Current (ID)
3 A

Threshold Voltage
-2.5 V

Rds On Max
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Gate to Source Voltage (Vgs)
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Power Dissipation
1.25 W

Input Capacitance
510 pF

Infineon

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Mount
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Drain to Source Voltage (Vdss)
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Continuous Drain Current (ID)
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Threshold Voltage
1.7 V

Rds On Max
27 mΩ

Gate to Source Voltage (Vgs)
20 V

Power Dissipation
1.3 W

Input Capacitance
382 pF

Documents

Download datasheets and manufacturer documentation for Infineon IRLML9303TRPBF.

element14 APAC
Datasheet	10 pages	8 years ago
Datasheet	10 pages	10 years ago
Allied Electronics & Automation
Datasheet	10 pages	9 years ago
Upverter
Technical Drawing
iiiC
Datasheet	10 pages	8 years ago
Compliance Statements
Conflict Mineral Statement
Rohs Statement	1 page	6 years ago
Reach Statement	6 pages	6 years ago

Descriptions

Descriptions of Infineon IRLML9303TRPBF provided by its distributors.

MOSFET, P-CHANNEL, -30V, -2.3A, 165 MOHM, SOT-23

Allied Electronics & Automation

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 1.25 W

Distrelec

Single P-Channel 30 V 165 mOhm 2 nC HEXFET® Power Mosfet - MICRO-3

Future Electronics

P Channel, MOSFET, -30V, -2.3 A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.3V ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; P-Channel MOSFET; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

Infineon