The BFU590GX parts are TRANS RF BJT NPN 16V 0.3A 2000MW AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SC-73 T/R, manufactured by NXP are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The BFU590GX components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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BFU580GX with pin details, that includes NPI Part Build_RF Transistors Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-261-4, TO-261AA, Technology is designed to work in Si, as well as the Surface Mount Mounting Type, the device can also be used as SOT-223 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 1W Power Max, the device has a NPN of Transistor Type, and Current Collector Ic Max is 60mA, and the Voltage Collector Emitter Breakdown Max is 12V, and DC Current Gain hFE Min Ic Vce is 60 @ 30mA, 8V, and the Frequency Transition is 11GHz, and Noise Figure dB Typ f is 1.4dB @ 1.8GHz, and the Gain is 10.5dB, and Pd Power Dissipation is 1000 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Operating Frequency is 900 MHz, and Collector Emitter Voltage VCEO Max is 16 V, and the Transistor Polarity is NPN, and Emitter Base Voltage VEBO is 2 V, and the Maximum DC Collector Current is 100 mA, and Continuous Collector Current is 30 mA, and the DC Collector Base Gain hfe Min is 60.
BFU580QX with user guide, that includes 12V Voltage Collector Emitter Breakdown Max, they are designed to operate with a NPN Transistor Type, Transistor Polarity is shown on datasheet note for use in a NPN, that offers Technology features such as Si, Supplier Device Package is designed to work in SOT-89-3, as well as the NPI Part Build_RF Transistors Series, the device can also be used as 1W Power Max. In addition, the Pd Power Dissipation is 1000 mW, the device is offered in Digi-ReelR Alternate Packaging Packaging, the device has a TO-243AA of Package Case, and Operating Frequency is 900 MHz, and the Noise Figure dB Typ f is 1.3dB @ 1.8GHz, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 150 C, and Maximum DC Collector Current is 100 mA, and the Gain is 8.5dB, and Frequency Transition is 10.5GHz, and the Emitter Base Voltage VEBO is 2 V, and DC Current Gain hFE Min Ic Vce is 60 @ 30mA, 8V, and the DC Collector Base Gain hfe Min is 60, and Current Collector Ic Max is 60mA, and the Continuous Collector Current is 30 mA, and Configuration is Dual, and the Collector Emitter Voltage VCEO Max is 16 V.
BFU550XVL with circuit diagram, that includes 50mA Current Collector Ic Max, they are designed to operate with a 60 @ 15mA, 8V DC Current Gain hFE Min Ic Vce, Frequency Transition is shown on datasheet note for use in a 11GHz, that offers Gain features such as 15.5dB, Mounting Type is designed to work in Surface Mount, Gull Wing, as well as the 1.3dB @ 1.8GHz Noise Figure dB Typ f, the device can also be used as TO-253-4, TO-253AA Package Case. In addition, the Packaging is Tape & Reel (TR), the device is offered in 450mW Power Max, the device has a SOT-143B of Supplier Device Package, and Transistor Type is NPN, and the Voltage Collector Emitter Breakdown Max is 12V.
Series
NPI Part Build_RF Transistors
Packaging
Digi-ReelR Alternate Packaging
Mounting Style
SMD/SMT
Package Case
TO-261-4, TO-261AA
Technology
Si
Mounting Type
Surface Mount
Supplier Device Package
SC-73
Configuration
Dual
Power Max
2W
Transistor Type
NPN
Current Collector Ic Max
200mA
Voltage Collector Emitter Breakdown Max
12V
DC Current Gain hFE Min Ic Vce
60 @ 80mA, 8V
Frequency Transition
8.5GHz
Noise Figure dB Typ f
-
Gain
8dB
Pd Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Operating Frequency
900 MHz
Collector Emitter Voltage VCEO Max
16 V
Transistor Polarity
NPN
Emitter Base Voltage VEBO
2 V
Maximum DC Collector Current
300 mA
Continuous Collector Current
80 mA
DC Collector Base Gain hfe Min
60