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The SMUN5313DW1T1G is TRANS NPN/PNP PREBIAS SOT363, that includes MUN5313DW1 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Surface Mount Mounting Type, the device can also be used as SC-88/SC70-6/SOT-363 Supplier Device Package. In addition, the Configuration is Dual, the device is offered in 187mW Power Max, the device has a 1 NPN, 1 PNP - Pre-Biased (Dual) of Transistor Type, and Current Collector Ic Max is 100mA, and the Voltage Collector Emitter Breakdown Max is 50V, and Resistor Base R1 Ohms is 47k, and the Resistor Emitter Base R2 Ohms is 47k, and DC Current Gain hFE Min Ic Vce is 80 @ 5mA, 10V, and the Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and Current Collector Cutoff Max is 500nA, and the Pd Power Dissipation is 187 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN PNP, and Continuous Collector Current is 0.1 A, and the DC Collector Base Gain hfe Min is 80, and Typical Input Resistor is 47 kOhms, and the Typical Resistor Ratio is 1.

The SMUN5312DW1T1G is TRANS NPN/PNP PREBIAS SOT363, that includes 50V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 250mV @ 300μA, 10mA Vce Saturation Max Ib Ic, Transistor Type is shown on datasheet note for use in a 1 NPN, 1 PNP - Pre-Biased (Dual), that offers Supplier Device Package features such as SC-88/SC70-6/SOT-363, Series is designed to work in MUN5312DW1, as well as the 22k Resistor Emitter Base R2 Ohms, the device can also be used as 22k Resistor Base R1 Ohms. In addition, the Power Max is 187mW, the device is offered in Tape & Reel (TR) Packaging, the device has a 6-TSSOP, SC-88, SOT-363 of Package Case, and Mounting Type is Surface Mount, and the DC Current Gain hFE Min Ic Vce is 60 @ 5mA, 10V, and Current Collector Ic Max is 100mA, and the Current Collector Cutoff Max is 500nA.

SMUN5313DW1T3G with circuit diagram, that includes 500nA Current Collector Cutoff Max, they are designed to operate with a 100mA Current Collector Ic Max, DC Current Gain hFE Min Ic Vce is shown on datasheet note for use in a 80 @ 5mA, 10V, that offers Mounting Type features such as Surface Mount, Package Case is designed to work in 6-TSSOP, SC-88, SOT-363, as well as the Tape & Reel (TR) Packaging, the device can also be used as 187mW Power Max. In addition, the Resistor Base R1 Ohms is 47k, the device is offered in 47k Resistor Emitter Base R2 Ohms, the device has a MUN5313DW1 of Series, and Supplier Device Package is SOT-363, and the Transistor Type is 1 NPN, 1 PNP - Pre-Biased (Dual), and Vce Saturation Max Ib Ic is 250mV @ 300μA, 10mA, and the Voltage Collector Emitter Breakdown Max is 50V.