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The TSM190N08CZ C0G is MOSFET 75V N Channel Power Mosfet, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Id Continuous Drain Current is 190 A, the device is offered in 75 V Vds Drain Source Breakdown Voltage, the device has a 4.2 mOhms of Rds On Drain Source Resistance, and Transistor Polarity is N-Channel.

The TSM19N20CP ROG is MOSFET 200V 18A N Channel Mosfet, that includes 200 V Vds Drain Source Breakdown Voltage, they are designed to operate with a 0.139332 oz Unit Weight, Transistor Type is shown on datasheet note for use in a 1 N-Channel, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the 92 mOhms Rds On Drain Source Resistance, the device can also be used as Reel Packaging. In addition, the Package Case is TO-252-3, the device is offered in 1 Channel Number of Channels, the device has a SMD/SMT of Mounting Style, and Id Continuous Drain Current is 18 A.

TSM1A103F34D1R with circuit diagram manufactured by THINKING. The TSM1A103F34D1R is available in THINKING Package, is part of the IC Chips.

TSM1A103F34D1RZ with EDA / CAD Models manufactured by TKS. The TSM1A103F34D1RZ is available in THINKING Package, is part of the IC Chips.