The SI2367DS-T1-GE3 parts are Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SI2367DS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The Si2367DS-T1-GE3 is MOSFET P-CH 20V 3.8A SOT-23, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2367DS-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 1.7W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 561pF @ 10V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 3.8A (Tc), and the Rds On Max Id Vgs is 66 mOhm @ 2.5A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 23nC @ 8V, and Pd Power Dissipation is 1.7 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 9 ns, and Rise Time is 9 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 3.8 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Vgs th Gate Source Threshold Voltage is - 0.4 V, and the Rds On Drain Source Resistance is 66 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 35 ns, and Typical Turn On Delay Time is 8 ns, and the Qg Gate Charge is 15 nC, and Channel Mode is Enhancement.

The Si2366DS-T1-GE3 is MOSFET N-CH 30V 5.8A SOT-23, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 30 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Typical Turn On Delay Time features such as 5 ns, Typical Turn Off Delay Time is designed to work in 14 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 12 ns Rise Time, the device has a 30 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 6.4 nC, and the Pd Power Dissipation is 2.1 W, and Part Aliases is SI2366DS-GE3, and the Packaging is Reel, and Package Case is SOT-23-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Id Continuous Drain Current is 5.8 A, and Forward Transconductance Min is 13 S, and the Fall Time is 8 ns, and Configuration is Single.

SI2367DS with circuit diagram manufactured by VISHAY. The SI2367DS is available in SOT23-3 Package, is part of the FETs - Single.

SI2367DS-T1-E3 with EDA / CAD Models manufactured by VISHAY. The SI2367DS-T1-E3 is available in SOT-23 Package, is part of the IC Chips.