The PC817X3NIP1B consists of an infrared emitting diode (IRED) optically coupled to a phototransistor. The device is packaged in a 4-pin Dual Inline Package (DIP) and is available with a wide-lead spacing option as well as a Surface Mount Technology (SMT) gullwing lead-form option. The input-output isolation voltage (rms) is 5.0kV.
The collector-emitter voltage is 80V(*), and the Current Transfer Ratio (CTR) ranges from 50% to 600% at an input current of 5mA.
Note: The exact specifications may vary, and it is recommended to refer to the datasheet or specific product documentation for precise details.
Feature
1. 4pin DIP package
2. Double transfer mold package (ldeal for Flow Solder-
ing)
3. High collector-emitter voltage (VcEo:80V(*))
4. Current transfer ratio (CTR : MIN. 50% at l==5 mAVce-5V)
5. Several CTR ranks available6. High isolation voltage between input and output(Visolrms) : 5.0 kV)
Applications
1. I/O isolation for MCUs (Micro Controller Units)
2. Noise suppression in switching circuits
3. Signal transmission between circuits of different potentials and impedances
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
