The IRFB18N50KPBF parts are Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The IRFB18N50KPBF components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The IRFB17N50LPBF is MOSFET N-CH 500V 16A TO-220AB, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 220 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 28 ns, and Rise Time is 51 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 16 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Rds On Drain Source Resistance is 320 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 50 ns, and the Typical Turn On Delay Time is 21 ns, and Channel Mode is Enhancement.

The IRFB18N50K is MOSFET N-CH 500V 17A TO-220AB, that includes 30 V Vgs Gate Source Voltage, they are designed to operate with a 500 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Typical Turn On Delay Time features such as 22 ns, Typical Turn Off Delay Time is designed to work in 45 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 60 ns Rise Time, the device has a 290 mOhms of Rds On Drain Source Resistance, and Pd Power Dissipation is 220 W, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 17 A, and Fall Time is 30 ns, and the Configuration is Single, and Channel Mode is Enhancement.

The IRFB17N60K is MOSFET N-CH 600V 17A TO-220AB manufactured by VISHAY. The IRFB17N60K is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 17A TO-220AB, N-Channel 600V 17A (Tc) 340W (Tc) Through Hole TO-220AB, Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220.