The SI1401EDH-T1-GE3 parts are MOSFET P-CH 12V 4A SC-70-6, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SI1401EDH-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you didn't find what you were looking for, you can get more valuable information by emails, such as the SI1401EDH-T1-GE3 Inventory quantity, preferential price, datasheet, and manufacturer. We are always happy to hear from you, so feel free to contact us.

The Si1401EDH-T1-GE3 is MOSFET P-CH 12V 4A SC-70-6, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI1401EDH-GE3, that offers Unit Weight features such as 0.000265 oz, Mounting Style is designed to work in SMD/SMT, as well as the 6-TSSOP, SC-88, SOT-363 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SC-70-6 (SOT-363), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 2.8W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 12V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 4A (Tc), and Rds On Max Id Vgs is 34 mOhm @ 5.5A, 4.5V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 36nC @ 8V, and the Pd Power Dissipation is 2.8 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 10 V, and the Id Continuous Drain Current is - 4 A, and Vds Drain Source Breakdown Voltage is - 12 V, and the Vgs th Gate Source Threshold Voltage is - 1 V, and Rds On Drain Source Resistance is 34 mOhms, and the Transistor Polarity is P-Channel, and Qg Gate Charge is 24 nC, and the Forward Transconductance Min is 16 S.

The SI1400DL-T1-E3 is MOSFET N-CH 20V 1.6A SC70-6, that includes 12 V Vgs Gate Source Voltage, they are designed to operate with a 20 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Typical Turn On Delay Time features such as 10 ns, Typical Turn Off Delay Time is designed to work in 14 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Tradename is TrenchFET, the device is offered in Si Technology, the device has a 30 ns of Rise Time, and Rds On Drain Source Resistance is 150 mOhms, and the Pd Power Dissipation is 568 mW, and Part Aliases is SI1400DL-E3, and the Packaging is Reel, and Package Case is SOT-363-6, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 1.6 A, and Forward Transconductance Min is 5 S, and the Fall Time is 8 ns, and Configuration is Single, and the Channel Mode is Enhancement.

The Si1400DL-T1-GE3 is MOSFET N-CH 20V 1.6A SC-70-6, that includes Single Configuration, they are designed to operate with a 1.6 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in SMD/SMT, as well as the 1 Channel Number of Channels, the device can also be used as SOT-363-6 Package Case. In addition, the Packaging is Reel, the device is offered in 568 mW Pd Power Dissipation, the device has a 150 mOhms of Rds On Drain Source Resistance, and Technology is Si, and the Tradename is TrenchFET, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Unit Weight is 0.000265 oz, and the Vds Drain Source Breakdown Voltage is 20 V, and Vgs Gate Source Voltage is 12 V.

SI1401EDH-T1-E3 with EDA / CAD Models manufactured by VISHAY. The SI1401EDH-T1-E3 is available in SC70-6 Package, is part of the IC Chips.