The SIS412DN-T1-GE3 parts are N-Ch PowerPAK1212 30V 24mohm@10V- Lead(P, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The SIS412DN-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
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The SiS410DN-T1-GE3 is MOSFET N-CH 20V 35A PPAK 1212-8, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIS410DN-GE3, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerPAKR 1212-8, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR 1212-8 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 52W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 1600pF @ 10V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 35A (Tc), and Rds On Max Id Vgs is 4.8 mOhm @ 20A, 10V, and the Vgs th Max Id is 2.5V @ 250μA, and Gate Charge Qg Vgs is 41nC @ 10V, and the Pd Power Dissipation is 5.2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 15 ns, and the Rise Time is 15 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 35 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 30 ns, and Typical Turn On Delay Time is 25 ns, and the Forward Transconductance Min is 70 S, and Channel Mode is Enhancement.
SIS412DN with user guide manufactured by VISHAY. The SIS412DN is available in 1212-8 Package, is part of the FETs - Single.
SIS412DN-T1-E3 with circuit diagram manufactured by VISHAY. The SIS412DN-T1-E3 is available in QFN Package, is part of the IC Chips.
Transistor Polarity
N-Channel
Drain Source Breakdown Voltage
30 V
Gate Source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Resistance Drain Source RDS (on)
0.024 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Packaging
Reel
Fall Time
10 ns
Forward Transconductance gFS (Max / Min)
17 S
Minimum Operating Temperature
- 55 C
Power Dissipation
3.2 W
Rise Time
12 ns
Factory Pack Quantity
3000
Typical Turn Off Delay Time
15 ns
Part # Aliases
SIS412DN-GE3