This new generation 100V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DCpower management and Motherboard / Servers application
Qualified to AECQ10x
Yes
Automotive Compliant PPAP
On Request*
Polarity
N
ESD Diodes (Y/N)
No
VDS (V)
100
VGS (±V)
20
IDS @ TA = +25°C (A)
12
IDS @ TC = +25°C (A)
N/A
PD @ TA = +25°C (W)
42
PD @ TC = +25°C (W)
RDS(ON) Max @ VGS (10V) (mΩ)
140
RDS(ON) Max @ VGS (4.5V) (mΩ)
160
RDS(ON) Max @ VGS (2.5V) (mΩ)
VGS (th) Max (V)
3
CISS Typ (pF)
CISS Condition [@VDS] (V)
QG Typ @ VGS = 4.5V (nC) (nC)
QG Typ @ VGS = 10V (nC)
9.7
Contact The Mailbox
Instant Messaging
7*24 hours hotline
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
