The IRFBF30PBF parts are Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The IRFBF30PBF components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The IRFBF20STRLPBF is MOSFET N-CH 900V 1.7A D2PAK, that includes Reel Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 3.1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 32 ns, and Rise Time is 21 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 1.7 A, and the Vds Drain Source Breakdown Voltage is 900 V, and Vgs th Gate Source Threshold Voltage is 2 V to 4 V, and the Rds On Drain Source Resistance is 8 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 56 ns, and Typical Turn On Delay Time is 8 ns, and the Qg Gate Charge is 38 nC, and Forward Transconductance Min is 0.6 S, and the Channel Mode is Enhancement.

The IRFBF20STRRPBF is MOSFET N-CH 900V 1.7A D2PAK, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 900 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.050717 oz, that offers Typical Turn On Delay Time features such as 8 ns, Typical Turn Off Delay Time is designed to work in 56 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 21 ns Rise Time, the device has a 8 Ohms of Rds On Drain Source Resistance, and Pd Power Dissipation is 3.1 W, and the Packaging is Reel, and Package Case is TO-252-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 1.7 A, and Fall Time is 32 ns, and the Configuration is Single, and Channel Mode is Enhancement.

The IRFBF30 is MOSFET N-CH 900V 3.6A TO-220AB manufactured by IR. The IRFBF30 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 900V 3.6A TO-220AB, N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-220AB.