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The SI7170DP-T1-GE3 is MOSFET N-CH 30V 40A PPAK SO-8, that includes SI71xxDx Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a SI7170DP-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the SO-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 48 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 8 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 40 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 2.7 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns, and the Typical Turn On Delay Time is 15 ns, and Channel Mode is Enhancement.

SI7170DP-T1-E3 with user guide manufactured by VISHAY. The SI7170DP-T1-E3 is available in QFN8 Package, is part of the IC Chips.

SI7172DP with circuit diagram manufactured by SI. The SI7172DP is available in QFN-8 Package, is part of the FETs - Single.