The DMN6069SFG-7 parts are 60V N-CHANNEL ENHANCEMENT MODE MOSFET, manufactured by DIODES are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The DMN6069SFG-7 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The DMN6068LK3-13 is MOSFET N-CH 60V 6A DPAK, that includes DMN6068 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a TO-252-3 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.12W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 502pF @ 30V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 6A (Ta), and Rds On Max Id Vgs is 68 mOhm @ 12A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 10.3nC @ 10V, and the Pd Power Dissipation is 4.12 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8.7 ns, and the Rise Time is 10.8 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 8.5 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 68 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 11.9 ns, and Typical Turn On Delay Time is 3.6 ns, and the Qg Gate Charge is 10.3 nC, and Forward Transconductance Min is 19.7 S, and the Channel Mode is Enhancement.

The DMN6068SE-13 is MOSFET N-CH 60V 4.1A SOT223, that includes 3V @ 250μA Vgs th Max Id, they are designed to operate with a 3 V Vgs th Gate Source Threshold Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 60 V, that offers Unit Weight features such as 0.000282 oz, Typical Turn On Delay Time is designed to work in 3.6 ns, as well as the 11.9 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a SOT-223 of Supplier Device Package, and Series is DMN6068, and the Rds On Max Id Vgs is 68 mOhm @ 12A, 10V, and Rds On Drain Source Resistance is 68 mOhms, and the Qg Gate Charge is 10.3 nC, and Power Max is 2W, and the Pd Power Dissipation is 16 W, and Packaging is Digi-ReelR Alternate Packaging, and the Package Case is TO-261-4, TO-261AA, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 502pF @ 30V, and the Id Continuous Drain Current is 5.6 A, and Gate Charge Qg Vgs is 10.3nC @ 10V, and the FET Type is MOSFET N-Channel, Metal Oxide, and FET Feature is Standard, and the Drain to Source Voltage Vdss is 60V, and Current Continuous Drain Id 25°C is 4.1A (Ta), and the Configuration is Single, and Channel Mode is Enhancement.

DMN6069SFG-13 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 3.3 ns, that offers Id Continuous Drain Current features such as 18 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as SMD/SMT Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in PowerDI-3333 Package Case, the device has a Reel of Packaging, and Pd Power Dissipation is 930 mW, and the Qg Gate Charge is 14 nC, and Rds On Drain Source Resistance is 63 mOhms, and the Rise Time is 5 ns, and Series is DMN6069, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 12 ns, and the Typical Turn On Delay Time is 3.6 ns, and Unit Weight is 0.002540 oz, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs Gate Source Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 1 V.