The BSZ099N06LS5ATMA1 parts are MOSFET TRENCH 40<-<100V, manufactured by Infineon are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The BSZ099N06LS5ATMA1 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The BSZ097N04LSGATMA1 is MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3, that includes BSZ097N04 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSZ097N04LS BSZ097N04LSGXT G SP000388296, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the TSDSON-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 35 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 2.8 ns, and Rise Time is 2.4 ns, and the Vgs Gate Source Voltage is +/- 20 V, and Id Continuous Drain Current is 40 A, and the Vds Drain Source Breakdown Voltage is 40 V, and Vgs th Gate Source Threshold Voltage is 2 V, and the Rds On Drain Source Resistance is 9.7 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 16 ns, and Typical Turn On Delay Time is 3.5 ns, and the Qg Gate Charge is 18 nC, and Forward Transconductance Min is 47 S, and the Channel Mode is Enhancement.

BSZ097N10NS5ATMA1 with user guide, that includes 2.2 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Typical Turn On Delay Time features such as 11 ns, Typical Turn Off Delay Time is designed to work in 21 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 5 ns Rise Time, the device has a 13 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 22 nC, and the Pd Power Dissipation is 69 W, and Part Aliases is BSZ097N10NS5 SP001132550, and the Packaging is Reel, and Package Case is TSDSON-8, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 40 A, and Forward Transconductance Min is 23 S, and the Fall Time is 5 ns, and Configuration is Single, and the Channel Mode is Enhancement.

BSZ097N10NS5 with circuit diagram, that includes SMD/SMT Mounting Style, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TSDSON-8, that offers Packaging features such as Reel, Part Aliases is designed to work in BSZ097N10NS5ATMA1 SP001132550, as well as the BSZ097N10 Series, the device can also be used as Si Technology. In addition, the Transistor Polarity is N-Channel, the device is offered in 1 N-Channel Transistor Type.