Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
Features
Lower on voltage drop (VCE(sat))
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
Short-circuit withstand time 10 μs
Feature
Lower on voltage drop (VCE(sat))
Lower CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
Short-circuit withstand time 10 μs
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
