The SLVU2.8-4BTG was designed to protect low voltage, CMOS devices from ESD and lightning induced transients.There is a compensating diode in series with each low voltage TVS to present a low loading capacitance to the line being protected.These robust structures can safely absorb repetitive ESD strikes at ±30kV (contact discharge) per IEC61000-4-2 standard and each structure can safely dissipate up to 24A (IEC61000-4-5, tp=8/20μs) with very low clamping voltages.
Feature
ESD, IEC61000-4-2, ±30kV contact, ±30kV air
EFT, IEC61000-4-4, 40A (5/50ns)
Lightning, IEC61000-4-5, 24A (8/20μs)
Low capacitance of 3.8pF per line
Low leakage current of 1μA (MAX) at 2.8V
SOIC-8 pin configuration allows for simple flow-through layout
Applications
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 
