The PMXB360ENEAZ parts are PMXB360ENEA/DFN1010D-3/REEL 7", manufactured by NEXPERIA are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The PMXB360ENEAZ components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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PMXB120EPE with pin details, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 3-XDFN Exposed Pad Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in DFN1010D-3, as well as the MOSFET P-Channel, Metal Oxide FET Type, the device can also be used as 400mW Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 309pF @ 15V Input Capacitance Ciss Vds, the device has a Standard of FET Feature, and Current Continuous Drain Id 25°C is 2.4A (Ta), and the Rds On Max Id Vgs is 120 mOhm @ 2.4A, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 11nC @ 10V.

PMXB120EPEZ with user guide manufactured by NXP. The PMXB120EPEZ is available in DFN1010D-3 Package, is part of the Transistors - Bipolar (BJT) - RF, , and with support for "Bipolar Transistors - BJT 30 V, P-Channel 30V 2.4A (Ta) 400mW (Ta), 8.3W (Tc) Surface Mount DFN1010D-3, Trans MOSFET P-CH 30V 2.4A 3-Pin DFN-D EP T/R, Bipolar Transistors - BJT 30 V, P-channel Trench MOSFET.

PMXB350UPEZ with circuit diagram manufactured by NXP. is part of the Transistors - Bipolar (BJT) - RF, , and with support for "Bipolar Transistors - BJT 20 V, P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3, Trans MOSFET P-CH 20V 1.2A 3-Pin DFN-D EP T/R, Bipolar Transistors - BJT 20 V, P-channel Trench MOSFET.