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The NT5CC256M16DP-DI is DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin VFBGA manufactured by NANYA. The NT5CC256M16DP-DI is available in BGA Package, is part of the Memory, , and with support for DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin VFBGA.
NT5CC256M16EP-DII with user guide manufactured by NANYA. The NT5CC256M16EP-DII is available in FBGA Package, is part of the IC Chips, , and with support for DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin VFBGA.
NT5CC256M16EP-EK with circuit diagram manufactured by NANYA. The NT5CC256M16EP-EK is available in BGA Package, is part of the IC Chips.
NT5CC256M16ER-EK with EDA / CAD Models manufactured by NANYA. The NT5CC256M16ER-EK is available in BGA Package, is part of the IC Chips.
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NANYA TECHNOLOGY CORP
Package Description
TFBGA,
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
JESD 30 Code
R-PBGA-B96
Length
13 mm
Memory Density
4294967296 bit
Memory IC Type
DDR3L DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
96
Number of Words
268435456 words
Number of Words Code
256000000
Operating Mode
SYNCHRONOUS
Operating Temperature Max
95 °C
Operating Temperature Min
-40 °C
Organization
256MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Seated Height Max
1.2 mm
Self Refresh
YES
Supply Voltage Max (Vsup)
1.45 V
Supply Voltage Min (Vsup)
1.283 V
Supply Voltage Nom (Vsup)
1.35 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature Max (s)
NOT SPECIFIED
Width
8 mm