The IPW60R037P7 parts are TRANS MOSFET N-CH 600V 76A, manufactured by Infineon are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The IPW60R037P7 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The IPW50R299CP is MOSFET N-CH 550V 12A TO247-3, that includes CoolMOS CP Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPW50R299CPFKSA1 IPW50R299CPXK SP000301163, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-247-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 104 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 12 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 12 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Rds On Drain Source Resistance is 299 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 80 ns, and Typical Turn On Delay Time is 35 ns, and the Channel Mode is Enhancement.

The IPW50R350CP is MOSFET N-CH 550V 10A TO247-3, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 500 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Typical Turn On Delay Time features such as 35 ns, Typical Turn Off Delay Time is designed to work in 80 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Tradename is CoolMOS, the device is offered in Si Technology, the device has a CoolMOS CP of Series, and Rise Time is 14 ns, and the Rds On Drain Source Resistance is 350 mOhms, and Pd Power Dissipation is 89 W, and the Part Aliases is IPW50R350CPFKSA1 IPW50R350CPXK SP000301164, and Packaging is Tube, and the Package Case is TO-247-3, and Number of Channels is 1 Channel, and the Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 10 A, and the Fall Time is 12 ns, and Configuration is Single, and the Channel Mode is Enhancement.

The IPW50R399CP is MOSFET N-CH 560V 9A TO-247, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 14 ns, that offers Id Continuous Drain Current features such as 9 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device can also be used as Through Hole Mounting Style. In addition, the Number of Channels is 1 Channel, the device is offered in TO-247-3 Package Case, the device has a Tube of Packaging, and Part Aliases is IPW50R399CPFKSA1 IPW50R399CPXK SP000259980, and the Pd Power Dissipation is 83 W, and Rds On Drain Source Resistance is 399 mOhms, and the Rise Time is 14 ns, and Series is CoolMOS CP, and the Technology is Si, and Tradename is CoolMOS, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 80 ns, and Typical Turn On Delay Time is 35 ns, and the Unit Weight is 1.340411 oz, and Vds Drain Source Breakdown Voltage is 500 V, and the Vgs Gate Source Voltage is 20 V.

The IPW50R350CPFKSA1 is MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP, that includes XPW50R350 Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3, that offers Technology features such as Si, Transistor Polarity is designed to work in N-Channel, as well as the IPW50R350CP IPW50R350CPXK SP000301164 Part Aliases, the device can also be used as CoolMOS Tradename. In addition, the Vds Drain Source Breakdown Voltage is 500 V, the device is offered in 1 N-Channel Transistor Type, the device has a 1 Channel of Number of Channels.