Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light PunchThrough (XPT™) design platform, these devices feature high-current handling capabilities,high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, these devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage– a necessary ruggedness in snubberless hard-switching applications.

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