The CSD19536KTT parts are 100V N-Channel NexFET Power MOSFET, manufactured by TI are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The CSD19536KTT components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The CSD19536KCS is MOSFET N-CH 100V TO-220, that includes NexFET? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.211644 oz, that offers Mounting Style features such as Through Hole, Tradename is designed to work in NexFET, as well as the TO-220-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in Through Hole Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is TO-220-3, and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 375W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 12000pF @ 50V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 150A (Ta), and the Rds On Max Id Vgs is 2.7 mOhm @ 100A, 10V, and Vgs th Max Id is 3.2V @ 250μA, and the Gate Charge Qg Vgs is 153nC @ 10V, and Pd Power Dissipation is 375 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 5 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 259 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 2.5 V, and the Rds On Drain Source Resistance is 2.5 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 118 nC, and Forward Transconductance Min is 307 S.

The CSD19535KTTT is MOSFET 100V N-Channel NexFET Power MOSFET, that includes 2.2 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Unit Weight features such as 0.068654 oz, Typical Turn On Delay Time is designed to work in 9 ns, as well as the 21 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in NexFET Tradename, the device has a Si of Technology, and Series is CSD19535KTT, and the Rise Time is 18 ns, and Rds On Drain Source Resistance is 4.1 mOhms, and the Qg Gate Charge is 75 nC, and Pd Power Dissipation is 300 W, and the Packaging is Reel, and Package Case is TO-263-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 200 A, and Forward Transconductance Min is 301 S, and the Fall Time is 15 ns, and Configuration is Single, and the Channel Mode is Enhancement.

The CSD19535KTT is MOSFET 100V N-CH NexFET Pwr MOSFET, that includes 1 Channel Number of Channels, they are designed to operate with a Reel Packaging, Series is shown on datasheet note for use in a CSD19535KTT, that offers Technology features such as Si, Transistor Polarity is designed to work in N-Channel, as well as the 1 N-Channel Transistor Type.