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Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
High-current carrying capability package (up to 195 A, die-size dependent)
Targeted for high power density
| Transistor Polarity | N-Channel | Packaging | Tube |
|---|---|---|---|
| Drain Source Breakdown Voltage | 200 V | Fall Time | 48 ns |
| Gate Source Breakdown Voltage | +/- 20 V | Forward Transconductance gFS (Max / Min) | 27 S |
| Continuous Drain Current | 50 A | Gate Charge Qg | 156 nC |
| Resistance Drain Source RDS (on) | 40 mOhms | Minimum Operating Temperature | - 55 C |
| Configuration | Single | Power Dissipation | 300 W |
| Maximum Operating Temperature | + 175 C | Rise Time | 60 ns |
| Mounting Style | Through Hole | Factory Pack Quantity | 25 |
| Package / Case | TO-247AC | Typical Turn Off Delay Time | 55 ns |
Catalogue
FPGA / CPLD
Memory
MOS 
MCU 
DSP
OCEP
Secondary 
Other 